PART |
Description |
Maker |
NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
TC58NVG6D2GTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
TC58NVG6T2FTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
NAND08GW3B2AN1E NAND08GW3B2AN1F NAND04GW3B2AN1E NA |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
TC58NVG1S3ETA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
AMD27C256 AM27C256-120 AM27C256-120EC AM27C256-120 |
256 Kilobit (32,768 x 8-Bit) CMOS EPROM Circular Connector; No. of Contacts:5; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 8-input positive-NAND gates 14-SO 0 to 70 256千比特(32,768 × 8位)的CMOS存储 256 Kilobit (32,768 x 8-Bit) CMOS EPROM 256千比特(32,768 × 8位)的CMOS存储 256 Kilobit (32,768 x 8-Bit) CMOS EPROM 32K X 8 OTPROM, 90 ns, PDSO32 Quadruple 2-Input Multiplexers With Storage 16-PDIP 0 to 70 8-Line To 3-Line Priority Encoder 16-PDIP 0 to 70 Universal shift / storage registers 20-SOIC 0 to 70 8-input positive-NAND gates 14-SOIC 0 to 70 8-input positive-NAND gates 14-PDIP 0 to 70 8-Line To 3-Line Priority Encoder 16-SO 0 to 70 Hex Bus Drivers With 3-State Outputs 16-SOIC 0 to 70 256 Kilobit (32/768 x 8-Bit) CMOS EPROM
|
Cypress Semiconductor, Corp. Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
|
TC58256DC |
CMOS NAND EPROM
|
Toshiba Semiconductor
|
TH58NS100DC |
1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )
|
TOSHIBA
|
TC58NS256BDC |
256 MBit CMOS NAND EPROM
|
Toshiba
|
NMC27C64 NMC27C64N200 NMC27C64Q150 NMC27C64NE200 |
65 /536-Bit (8192 x 8) CMOS EPROM IC-64K CMOS PROM 8K X 8 EEPROM 5V, 200 ns, PDIP28 65,536-Bit (8192 x 8) CMOS EPROM 64KBit (8192 x 8) CMOS EPROM [Life-time buy]
|
Fairchild Semiconductor, Corp.
|
NAND02G-B2C NAND02GR3B2BZA1E NAND02GR4B2BZA1F NAND |
1千兆2千兆位,2112 Byte/1056字的页面.8V/3VNAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面.8V/3V,NAND闪存
|
意法半导 STMicroelectronics N.V.
|
H27UAG8T2A |
16 Gbit (2048 M x 8 bit) NAND Flash
|
Hynix
|